Gate contact, Turn ON/OFF, Qrr, RBSOA, short-circuit and Qg tests
CHARACTERIZATION · SWITCHING
Two- & Three-Level Dynamic Test Systems
Application-oriented switching characterization for IGBT and SiC devices, with two-level and three-level topologies on a production-ready platform.
MODEL / PLATFORMWTDS2015 / WTTDS2015
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Company catalogue reference · P06–0701WTDS2015 / WTTDS2015PLATFORM
02Double-pulse testingTypical applications
0350–1500 V, upgradeableCollector voltage
04P06–07Company catalogue reference
System highlights
Supports module, DBC/AMB semi-finished and common discrete package interfaces.
Two-level and NPC / T-NPC / A-NPC three-level architectures
Fast short-circuit protection below 1.5 μs
Dual-station configuration with high-temperature test support
Catalogue specifications
Two- & Three-Level Dynamic Test Systems
Technical data shown is based on the current WYJ product catalogue. Final configuration is application-specific.
01Collector voltage
50–1500 V, upgradeable
02Collector current
20–2000 A, upgradeable
03Pulse width
1–1000 μs
04Test temperature
Ambient to 200 °C
05Loop inductance
<15 nH (2-level) / <30 nH (3-level)
06Package coverage
HPD · ED3 · PIM · T-Pack · DCM · TO247
Typical applications
Device coverage
01Double-pulse testing
02Traction inverters
03SiC switching
04Module R&D and production
APPLICATION ENGINEERING · SHENZHEN